Mask pattern correction method, mask pattern creation system...

Details Mask pattern correction method, mask pattern creation system... Mask pattern correction method, mask pattern creation system...

2005-02-08

2005-02-08

Patel, Kanjibhai (Department: 2625)

Image analysis

Applications

Manufacturing or product inspection

C382S199000, C430S005000, C716S030000

Reexamination Certificate

active

06853743

ABSTRACT:
A mask pattern correction method includes the step of extracting a correction target edge from a design pattern, the step of calculating the distance from the correction target edge to the nearest edge of an adjacent pattern, the step of calculating the correction value by a simulation in accordance with a pattern layout present within a given range determined by the correction target edge, and moving the correction target edge on the basis of the calculated correction value when the distance calculated in the distance calculation step is smaller than a predetermined distance, and the step of moving the correction target edge on the basis of an correction value set as a rule in advance in accordance with the distance when the distance calculated in the distance calculation step is larger than the predetermined distance.

REFERENCES:
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patent: 5825647 (1998-10-01), Tsudaka
patent: 5862058 (1999-01-01), Samuels et al.
patent: 5879844 (1999-03-01), Yamamoto et al.
patent: 6245466 (2001-06-01), Kotani et al.
patent: 6350977 (2002-02-01), Taoka
patent: 11-102062 (1999-04-01), None
SPIE, “Correcting for Proximity Effect Widens Process Latitude”, by R.C. Henderson et al., vol. 2197, pp 361-370, 1994.

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