Non-volatile semiconductor device having a means to relieve...

Details Non-volatile semiconductor device having a means to relieve... Non-volatile semiconductor device having a means to relieve...

2005-02-01

2005-02-01

Nguyen, Tan T. (Department: 2818)

Static information storage and retrieval

Floating gate

Particular connection

C365S200000

Reexamination Certificate

active

06850436

ABSTRACT:
In a flash memory including memory blocks and a controller for performing erasure and the like with respect to the memory blocks, in the case where a deficient erasure status is output when a certain memory block receives an erasure command, a redundancy judging circuit stores an address at that time and an address inside of a redundant block as a redundant address with respect to the address at that time in a redundant address storage region. Thereafter, when the address is accessed, the address is replaced with the redundant address stored in the redundant address storage region, so that a deficient memory block can be replaced with a redundant block.

REFERENCES:
patent: 6262916 (2001-07-01), Kuriyama et al.
patent: 6556479 (2003-04-01), Wada et al.
patent: 2001-188712 (2001-07-01), None

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