Method of making and interconnect structure

Details Method of making and interconnect structure Method of making and interconnect structure

2005-08-23

2005-08-23

Chang, Rick Kiltae (Department: 3729)

Metal working

Method of mechanical manufacture

Electrical device making

C029S846000, C427S097100, C427S099300

Reexamination Certificate

active

06931726

ABSTRACT:
A method of making an interconnect structure having an increased chip connector pad and plated through hole density is provided. In particular, the method includes the steps of providing a substrate having at least one plated through hole therein, and positioning a first conductive layer and a second conductive layer over the at least one plated through hole on opposing surfaces of the substrate. The method includes positioning a layer of dielectric material thereon on the first conductive layer. The dielectric layer includes at least one aperture selectively positioned directly over the at least one plated through hole. The substrate further includes a metal layer, and at least a pair of conductive layers that can carry signals, and power.

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