Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2005-10-11
2005-10-11
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S503000, C257S510000
Reexamination Certificate
active
06953983
ABSTRACT:
Techniques of shallow trench isolation and devices produced therefrom are shown. The techniques of shallow trench isolation utilize foamed polymers, cured aerogels or air gaps as the insulation medium. Such techniques facilitate lower dielectric constants than the standard silicon dioxide due to the cells of gaseous components inherent in foamed polymers, cured aerogels or air gaps. Lower dielectric constants reduce capacitive coupling concerns and thus permit higher device density in an integrated circuit device. The shallow trench isolation structures are used on a variety of substrates including silicon-on-insulator (SOI) substrates and silicon-on-nothing (SON) substrates.
REFERENCES:
patent: 3506438 (1970-04-01), Krock et al.
patent: 3953566 (1976-04-01), Gore
patent: 3956195 (1976-05-01), Topchiashvili et al.
patent: 3962153 (1976-06-01), Gore
patent: 4096227 (1978-06-01), Gore
patent: 4368350 (1983-01-01), Perelman
patent: 4482516 (1984-11-01), Bowman et al.
patent: 4561173 (1985-12-01), Te Velde
patent: 4599136 (1986-07-01), Araps et al.
patent: 4749621 (1988-06-01), Araps et al.
patent: 4962058 (1990-10-01), Cronin et al.
patent: 5098856 (1992-03-01), Beyer et al.
patent: 5103288 (1992-04-01), Sakamoto et al.
patent: 5128382 (1992-07-01), Elliott, Jr. et al.
patent: 5137780 (1992-08-01), Nichols et al.
patent: 5158986 (1992-10-01), Cha et al.
patent: 5158989 (1992-10-01), Ogitani et al.
patent: 5171713 (1992-12-01), Matthews
patent: 5173442 (1992-12-01), Carey
patent: 5227103 (1993-07-01), Muschiatti
patent: 5264375 (1993-11-01), Bang et al.
patent: 5324683 (1994-06-01), Fitch et al.
patent: 5334356 (1994-08-01), Baldwin et al.
patent: 5340843 (1994-08-01), Tsuruta et al.
patent: 5408742 (1995-04-01), Zaidel et al.
patent: 5438539 (1995-08-01), Mori
patent: 5449427 (1995-09-01), Wojnarowski et al.
patent: 5461003 (1995-10-01), Havemann et al.
patent: 5470693 (1995-11-01), Sachdev et al.
patent: 5470802 (1995-11-01), Gnade et al.
patent: 5473814 (1995-12-01), White
patent: 5480048 (1996-01-01), Kitamura et al.
patent: 5486493 (1996-01-01), Jeng
patent: 5500078 (1996-03-01), Lee
patent: 5510645 (1996-04-01), Fitch et al.
patent: 5548159 (1996-08-01), Jeng
patent: 5552638 (1996-09-01), O'Connor et al.
patent: 5554305 (1996-09-01), Wojnarowski et al.
patent: 5554870 (1996-09-01), Fitch et al.
patent: 5554875 (1996-09-01), Hartauer
patent: 5591676 (1997-01-01), Hughes et al.
patent: 5593926 (1997-01-01), Fujihira
patent: 5747880 (1998-05-01), Havemann et al.
patent: 5780121 (1998-07-01), Endo
patent: 5785787 (1998-07-01), Wojnarowski et al.
patent: 5786630 (1998-07-01), Bhansali et al.
patent: 5798200 (1998-08-01), Matsuura et al.
patent: 5804607 (1998-09-01), Hedrick et al.
patent: 5821621 (1998-10-01), Jeng
patent: 5830923 (1998-11-01), Venkataraman
patent: 5841075 (1998-11-01), Hanson
patent: 5844317 (1998-12-01), Bertolet et al.
patent: 5864923 (1999-02-01), Rouanet et al.
patent: 5878314 (1999-03-01), Takaya et al.
patent: 5879787 (1999-03-01), Petefish
patent: 5879794 (1999-03-01), Korleski
patent: 5883009 (1999-03-01), Villa et al.
patent: 5891797 (1999-04-01), Farrar
patent: 5912313 (1999-06-01), McIntosh et al.
patent: 5923074 (1999-07-01), Jeng
patent: 5926732 (1999-07-01), Matsuura
patent: 5949144 (1999-09-01), Delgado et al.
patent: 5953626 (1999-09-01), Hause et al.
patent: 5994777 (1999-11-01), Farrar
patent: 6037245 (2000-03-01), Matsuda
patent: 6037249 (2000-03-01), Chiang et al.
patent: 6040628 (2000-03-01), Chiang et al.
patent: 6043146 (2000-03-01), Watanabe et al.
patent: 6071600 (2000-06-01), Rosenmayer
patent: 6077792 (2000-06-01), Farrar
patent: 6130140 (2000-10-01), Gonzalez
patent: 6165890 (2000-12-01), Kohl et al.
patent: 6172305 (2001-01-01), Tanahashi
patent: 6177329 (2001-01-01), Pang
patent: 6195156 (2001-02-01), Miyamoto et al.
patent: 6218449 (2001-04-01), Planche et al.
patent: 6232140 (2001-05-01), Ferrari et al.
patent: 6245658 (2001-06-01), Buynoski
patent: 6255712 (2001-07-01), Clevenger et al.
patent: 6265303 (2001-07-01), Lu et al.
patent: 6268630 (2001-07-01), Schwank et al.
patent: 6268637 (2001-07-01), Gardner et al.
patent: 6274920 (2001-08-01), Park et al.
patent: 6287979 (2001-09-01), Zhou et al.
patent: 6303487 (2001-10-01), Kagamihara
patent: 6313046 (2001-11-01), Juengling et al.
patent: 6313518 (2001-11-01), Ahn et al.
patent: 6323125 (2001-11-01), Soo et al.
patent: 6331480 (2001-12-01), Tsai et al.
patent: 6333556 (2001-12-01), Juengling et al.
patent: 6342454 (2002-01-01), Hawker et al.
patent: 6350672 (2002-02-01), Sun
patent: 6352818 (2002-03-01), Hsieh
patent: 6380294 (2002-04-01), Babinec et al.
patent: 6413827 (2002-07-01), Farrar
patent: 6420261 (2002-07-01), Kudo
patent: 6420262 (2002-07-01), Farrar
patent: 6420441 (2002-07-01), Allen et al.
patent: 6433413 (2002-08-01), Farrar
patent: 6503818 (2003-01-01), Jang
patent: 6670257 (2003-12-01), Barlocchi et al.
patent: 6756653 (2004-06-01), Farrar
patent: 6781192 (2004-08-01), Farrar
patent: 2001/0005625 (2001-06-01), Sun
patent: 2001/0014512 (2001-08-01), Lyons et al.
patent: 2001/0014526 (2001-08-01), Clevenger et al.
patent: 2001/0019876 (2001-09-01), Juengling et al.
patent: 2001/0034117 (2001-10-01), Eldridge et al.
patent: 2001/0050438 (2001-12-01), Juengling et al.
patent: 2002/0019125 (2002-02-01), Juengling et al.
patent: 2002/0037603 (2002-03-01), Eldridge et al.
patent: 2002/0094651 (2002-07-01), Farrar
patent: 578856 (1992-07-01), None
patent: 2158995 (1985-11-01), None
patent: 01-230505 (2001-08-01), None
Bhusari, Dhananjay, “Fabrication of Air-Channel Structures for Microfluidic, Microelecromechanical, and Microelectonic Applications”,Journal of Microelectromechanical Systems, 10 (3), (Sep. 2001), pp. 400-406.
“Accuspin T-18 Flowable Spin-On Polymer (SOP)”,AlliedSignal—Advanced Microelectronic Materials, Sunnyvale, CA,(Jul. 1998),pp. 1-2.
“Packaging”,Electronic Materials Handbook, vol. 1, ASM International,(1989),pp. 105, 768-769.
“Properties and Selection: Nonferrous Alloys and Pure Metals”,Metals Handbook Ninth Edition, vol. 2, ASM International,(1979),pp. 157, 395, 796-797.
Bai, Y. , et al., “Photosensitive Polynorbornene as a Dielectric Material for Packaging Applications”,Proceedings of the 2001 International Symposium on Advanced Packaging Materials, (2001),322-326.
Chiniwalla, P. , et al., “Structure-Property Relations for Polynorbornenes”,Proceedings from the Eighth Meeting of the Dupont Symposium on Polymides in Microelectronics, (1998),pp. 615-642.
Conti, R. , et al., “Processing Methods to Fill High Aspect Ratio Gaps Without Premature Constriction”,1999 Proceedings of Dielectrics for Multilevel Interconnection Conference, (1999),pp. 201-209.
Craig, J. D., “Polymide Coatings”,In: Packaging, Electronic Materials Handbook, vol. 1, ASM International Handbook Committee (eds.), ASM International, Materials Park, OH,(1989),767-772.
Grove, N. , et al., “Functionalized Polynorbornene Dielectric Polymers: Adhesion and Mechanical Properties”,Journal of Polymer Science, (1999),3003-3010.
Jayaraj, K. , et al., “Low Dielectric Constant Microcellular Foams”,Proceedings from the Seventh Meeting of the DuPont Symposium on Polymides in Microelectrics, (Sep. 1996),pp. 474-501.
Jin, C. , et al., “Porous Xerogel Films as Ultra-low Permittivity Dielectrics for ULSI Interconnect Applications”,Conference Proceedings ULSI XII—1997 Materials Research Society, (1997),pp. 463-469.
Labadie, J. , et al., “Nanopore Foams of High Temperature Polymers”,IEEE Transactions on Components, Hybrids, and Manufacturing Technology, 15, (Dec., 1992),925-930.
Miller, R. D., et al., “Low Dielectric Constant Polyimides and Polyimide Nanofoams”,Seventh Meeting of the DuPont Symposium on Polymides in Microelectronics, (Sep. 1996),pp. 443-473.
Ramos, T , et al., “Nanoporous Silica for Dielectric Constant Less Than 2”,Conference Proceedings ULSI XII—1997 Materials Research Societ
Fenty Jesse A.
Jackson Jerome
LandOfFree
Low dielectric constant STI with SOI devices does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Low dielectric constant STI with SOI devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low dielectric constant STI with SOI devices will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3460173