Photosensitive device

Details Photosensitive device Photosensitive device

2005-06-07

2005-06-07

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S429000, C257S430000

Reexamination Certificate

active

06903432

ABSTRACT:
A photosensitive device for enabling high speed detection of electromagnetic radiation. The device includes recessed electrodes for providing a generally homogeneous electric field in an active region. Carriers generated in the active region are detected using the recessed electrodes.

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M. Loken et al., “Fabrication of ultrafast Si based MSM photodetector,” Electronics Letters, May 14, 1998, vol. 34, No. 10 (© IEE 1998, No. 19980661).
M.Y. Liu et al., “140-GHz metal-semiconductor-metal photodetectors on silicon-on-insulator substrate with a scaled active layer,” Appl. Phys. Lett. 65 (7) Aug. 15, 1994 (© 1994 American Institute of Physics).
Lorenzo Colace et al., “Ge-on-Si Approaches to the Detection of Near-Infrared Light,” IEEE Journal of Quantum Electronics, vol. 35, No. 12, Dec. 1999 (© 1999 IEEE).
Li-Hong Laih et al., “Characteristics of MSM Photodetectors with Trench Electrodes on P-Type Si Wafer”, IEEE 1998.
Cha-Shin Lin et al., “Reducing Dark Current in a High-Speed Si-Based Interdigitated Trench-Electrode MSM Photodetector”, IEEE 2003.

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