Method of manufacturing silicon device, method of...

Details Method of manufacturing silicon device, method of... Method of manufacturing silicon device, method of...

2005-11-01

2005-11-01

Tugbang, A. Dexter (Department: 3729)

Metal working

Method of mechanical manufacture

Electrical device making

C029S830000, C029S831000, C029S846000, C216S027000, C216S041000, C216S033000, C216S049000, C347S068000, C438S106000, C438S127000

Reexamination Certificate

active

06959490

ABSTRACT:
Disclosed are a method f manufacturing a silicon device and a method of manufacturing a liquid jet head, which are capable of surely preventing damage of a piezoelectric element in manufacturing. In forming a thin-film pattern on one surface of a silicon wafer100,a first moisture permeation preventive layer96,which is so as to surround the entire thin-film pattern of the silicon wafer100,is formed in the same layer as a first conductive layer96on the silicon wafer100,a second moisture permeation preventive layer114having a narrower width than the first moisture permeation preventive layer96is formed in the same layer as an insulation layer100on the first moisture permeation preventive layer96,and a third moisture permeation preventive layer121is formed in the same layer as a second conductive layer120on the second moisture permeation preventive layer114so as to cover the second moisture permeation preventive layer114.Thus, a moisture permeation preventive pattern130is formed. Thereafter, a sealing plate is joined to the silicon wafer100through the moisture permeation preventive pattern130interposed therebetween, and a concave portion is formed by etching from the other surface of the silicon wafer100.Thus, a silicon device is manufactured.

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