Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2005-02-22
2005-02-22
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S091000, C257S092000, C257S093000, C257S099000, C438S022000, C438S024000, C438S028000
Reexamination Certificate
active
06858875
ABSTRACT:
A light-emitting-element array has a semiconductor layer formed on a current-blocking layer. Light-emitting elements are formed in the semiconductor layer by diffusion of an impurity of a different conductive type. An isolation trench divides the semiconductor layer into a first region and a remaining region, and divides the array of light-emitting elements into segments disposed alternately in these two regions, each segment preferably including one or two light-emitting elements. A first shared interconnecting pad is electrically coupled to the light-emitting elements in the first region by electrical paths not crossing the isolation trench. A second shared interconnecting pad is electrically coupled to light-emitting elements in the remaining semiconductor region by electrical paths crossing the isolation trench. The array can then be driven by a number of separate interconnecting pads equal to half the number of the light-emitting elements.
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“LED Purinta no Sekkei” (LED Printer Design), pp. 60-63, Trikeppusu KK, Aug. 31, 1987.
Hamano Hiroshi
Koizumi Masumi
Nobori Masaharu
Taninaka Masumi
Kang Donghee
Oki Data Corporation
Rabin & Berdo P.C.
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