Method for producing semiconductor crystal

Details Method for producing semiconductor crystal Method for producing semiconductor crystal

2005-11-15

2005-11-15

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S095000, C117S097000, C117S103000, C438S046000

Reexamination Certificate

active

06964705

ABSTRACT:
A seed layer as a laminate of a GaN layer (second seed layer) and an AlN buffer layer (first seed layer) is formed on a sapphire substrate. A front surface thereof is etched in the form of stripes with a stripe width (seed width) of about 5 μm, a wing width of about 15 μm and a depth of about 0.5 μm. As a result, mesa portions each shaped like nearly a rectangle in sectional view are formed. Non-etched portions each having the seed multilayer as its flat top portion are arranged at arrangement intervals of L≈20 μm. Part of the sapphire substrate is exposed in trough portions of wings. The ratio S/W of the seed width to the wing width is preferably selected to be in a range of from about ⅓ to about ⅕. Then, a semiconductor crystal A is grown to obtain a thickness of not smaller than 50 μm. The semiconductor crystal is separated from the starting substrate to thereby obtain a high-quality single crystal independent of the starting substrate. When a halide vapor phase epitaxy method is used in the condition that the V/III ratio is selected to be in a range of from 30 to 80, both inclusively, a semiconductor crystal free from cracks can be obtained.

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