Interconnect substrate, semiconductor device, methods of...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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Details

C257S678000, C257S680000, C257S684000, C257S685000, C257S686000, C257S688000, C257S689000, C257S690000, C257S723000, C257S730000, C257S731000

Reexamination Certificate

active

06867496

ABSTRACT:
A semiconductor device including a substrate (10). An interconnect pattern (12) is formed over the substrate (10), and the substrate (10) has a first portion (14) and a second portion (16) to be superposed on the first portion (14). The first portion (14) has edges (22), (24), (26) and (28) as positioning references. The second portion (16) has a shape to be superposed over the first portion (14) except the edges (22), (24), (26) and (28).

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