Nitride semiconductor device with reduced polarization fields

Details Nitride semiconductor device with reduced polarization fields Nitride semiconductor device with reduced polarization fields

2005-02-01

2005-02-01

Guerrero, Maria (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S046000, C438S047000, C438S048000, C438S604000

Reexamination Certificate

active

06849472

ABSTRACT:
A method for fabricating a light-emitting semiconductor device including a III-Nitride quantum well layer includes selecting a facet orientation of the quantum well layer to control a field strength of a piezoelectric field and/or a field strength of a spontaneous electric field in the quantum well layer, and growing the quantum well layer with the selected facet orientation. The facet orientation may be selected to reduce the magnitude of a piezoelectric field and/or the magnitude of a spontaneous electric field, for example. The facet orientation may also be selected to control or reduce the magnitude of the combined piezoelectric and spontaneous electric field strength.

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