Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

Filed on

2005-10-18

Date issued

2005-10-18

Examiner

Thomas, Tom (Department: 2815)

Patent Class

Coherent light generators

SubClass

Particular active media

SubSubClass

Semiconductor

Other Related Categories

C372S044010, C372S045013, C257S086000, C257S094000, C257S102000, C257S103000

Type

Reexamination Certificate

Status

active

Patent number

06956884

Description

ABSTRACT:
A second cladding layer composed of p-AlGaN and a second contact layer composed of p-GaN are formed in this order on a light emitting layer composed of a nitride based semiconductor. A predetermined region of the second cladding layer and the second contact layer is removed, to form a ridge portion. A high-resistive current blocking layer, to which impurities have been added, is formed on an upper surface of a flat portion of the second cladding layer, which remains without being removed, and on both sidewalls of the ridge portion.

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European Patent Office Communication, dated Dec. 23, 2002 in correspondence to the European Patent Application 00308270.8-2203.
Office Action of Apr. 22, 2003 for the corresponding Japanese application.
European Search Report dated Feb. 6, 2004.

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