Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

2005-02-15

2005-02-15

Wong, Don (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045013

Reexamination Certificate

active

06856636

ABSTRACT:
An n-GaAs buffer layer, an n-Alz1Ga1−z1As cladding layer, an n- or i-In0.49Ga0.51P waveguide layer, an i-Inx3Ga1−x3As1−y3Py3barrier layer, a compressive strain Inx1Ga1−x1As1−y1Py1quantum well active layer, an i-Inx3Ga1−x3As1−y3Py3upper barrier layer, and an In0.49Ga0.51P cap layer are laminated on an n-GaAs substrate. Regions near facets of the barrier layer to the cap layer are removed, and a p- or i-type In0.49Ga0.51P upper optical waveguide layer is laminated on the cap layer to fill in the removed portions. A p-GaAs etching stop layer, an n-In0.49(Alz2Ga1−z2)0.51P current confinement layer having an opening, an n-In0.49Ga0.51P second cap layer, a p-In0.49Ga0.51P second upper optical waveguide layer34and a p-Alz1Ga1−z1As upper cladding layer are laminated thereon, and a p-GaAs contact layer is formed inwardly except near the facets on the laminated surface, and an insulation film is formed on the regions near the facets, and a p-side electrode is provided as an uppermost layer.

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U.S. Appl. No. 09/731,702 filed Dec. 8, 2000.
IEEE Journal of Selected Topics in Quantum Electronics, vol. 1, No. 2, 1995, pp. 189.

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