Compositions – Etching or brightening compositions
Reexamination Certificate
2005-05-10
2005-05-10
Chen, Kin-Chan (Department: 1765)
Compositions
Etching or brightening compositions
C252S079300
Reexamination Certificate
active
06890452
ABSTRACT:
Novel aqueous, acid etch solutions comprising a fluorinated surfactant are provided. The etch solutions are used with a wide variety of substrates, for example, in the etching of silicon oxide-containing substrates.
REFERENCES:
patent: 4055458 (1977-10-01), Niederprüm et al.
patent: 4370254 (1983-01-01), Mitschke et al.
patent: 4582624 (1986-04-01), Enjo et al.
patent: 4795582 (1989-01-01), Ohmi et al.
patent: 5085786 (1992-02-01), Alm et al.
patent: 5350489 (1994-09-01), Muraoka
patent: 5478436 (1995-12-01), Winebarger et al.
patent: 5688884 (1997-11-01), Baker et al.
patent: 5755989 (1998-05-01), Ishii et al.
patent: 5803956 (1998-09-01), Ohmi et al.
patent: 5944907 (1999-08-01), Ohmi
patent: 6310018 (2001-10-01), Behr et al.
patent: 6348157 (2002-02-01), Ohmi et al.
patent: 6600557 (2003-07-01), Stefanescu et al.
patent: 6807824 (2004-10-01), Miwa
patent: 20020089044 (2002-07-01), Simmons et al.
patent: 20020142619 (2002-10-01), Grabbe et al.
patent: 20020162990 (2002-11-01), Johnson et al.
patent: 20030036569 (2003-02-01), Lamanna et al.
patent: 0 073 863 (1983-03-01), None
patent: 1037857 (1966-08-01), None
patent: WO 9746283 (1997-12-01), None
patent: WO 0130873 (2001-05-01), None
patent: WO 02092211 (2002-11-01), None
S. Raghavan, “Surfactants in Wet Processing of Silicon”, International Symposium on Ultraclean Processing of Silicon Surfaces, (1997), pp. 317-322, Department of Materials Science and Engineering, University of Arizona, Tucson, AZ.
A. M. Almanza, “Adsorption of a Polyglycidol Surfactant From HF and BHF Solutions at Silicon/Solution and Solution/Air Interfaces”, Abstract, Symposium Q, Ultraclean Processing of Semiconductor Structures and Devices, (Apr. 7-8, 1999), Materials Research Society [on line], [available and retrieved on the internet Jul. 30, 2002], <http://www.mrs.org/> pp. 1-2.
D. C. Burkman, “Understanding and Specifying the Sources and Effects of Surface Contamination in Semiconductor Processing”, Microcontamination, (Nov. 1988), pp. 57-62, 107-112.
K. M. Shah, “Change Your Surfactant Formula and Use Etch Baths for a Week”, Semiconductor International, (Oct. 1988), pp. 132-134.
P. D. Haworth, “Interaction of a Polyglycidol-Based Nonionic Surfactant with Silicon in Hydrofluoric Acid Solutions”, Journal of the Electrochemical Society, (1999), pp. 2284-2288, vol. 146, No. 6.
J. S. Jeon, “Effect of Temperature on the Interaction of Silicon with Nonionic Surfactants in Alkaline Solutions”, Journal of the Electrochemical Society, (Jan. 1996), pp. 277-283, vol. 143, No. 1.
J. S. Jeon, Electrochemical Investigation of Copper Contamination on Silicon Wafers from HF Solutions, Journal of the Electrochemical Society, (Sep. 1996), pp. 2870-2875, vol. 143, No. 9.
A. M. Almanza-Workman, “In Situ ATR-FTIR Analysis of Surfactant Adsorption onto Silicon from Buffered Hydrofluoric Acid Solutions”, Langmuir, (2000), pp. 3636-3640, vol. 16, No. 8, 2000 American Chemical Society.
M. Miyamoto, “Prevention of Microroughness Generation on the Silicon Wafer Surface in Buffered Hydrogen Fluoride by a Surfactant Addition”, Journal of the Electrochemical Society, (Oct. 1994), pp. 2899-2903, vol. 141, No. 10, The Electrochemical Society, Inc.
“ICKnowledge”, Aluminum Etch, 2001 IC Knowledge [on line], [retrieved from the internet on Apr. 14, 2003], <http://www.icknowledge.com/glossary/a.html>, pp. 1-4.
“Terra Universal Process Control Application Chart”, Terra Universal [on line], [retrieved from the internet on Apr. 14, 2003], <http://www.terrauniversal.com/products/wetprocess/processcontrol.html>, pp. 1-2.
“Metal Wet Bench wbmetal Operating Instructions”, “9.2 Aluminum Etch”, Stanford Nanofabrication Facility [on line], [last modified Aug. 14, 2000], [retrieved from the internet on Apr. 14, 2003], <http://snf.stanford.edu/Equipment/wbmetal/Operation.html>, pp. 1-14.
“Boe® Premixed Etchants, A complete range of useful thermal oxide etching rates”, Technical Data: Boe® Buffered Oxide Etchants, General Chemical, (2000), pp. 1-8.
R. A. Guenthner, “Surface Active Materials from Perfluorocarboxylic and Perfluorosulfonic Acids”, I & EC Product Research and Development, (Sep. 1962), pp. 165-169, vol. 1, No. 3.
H. Kikuyama, “Surface Active Buffered Hydrogen Fluoride Having Excellent Wettability for ULSI Processing”, IEEE Transactions on Semiconductor Manufacturing, (Aug. 1990), pp. 99-108, vol. 3, No. 3.
G. A. Olah, “Chapter 8 Fluorination with Onium Poly (Hydrogen Fluorides): The Taming of Anhydrous Hydrogen Fluoride for Synthesis”, Synthetic Fluorine Chemistry, (1992), pp. 163-204, John Wiley & Sons, Inc.
L. A. Zazzera, “XPS and SIMS Study of Anhydrous HF and UV/Ozone-Modified Silicon (100) Surfaces”, Journal of the Electrochemical Society, (Feb. 1989), pp. 484-491, vol. 136, No. 2.
U.S. Appl. No. 10/290,765, filed Nov. 8, 2002, Fluorinated Surfactants for Buffered Acid Etch Solutions.
Flynn Richard M.
Lamanna William M.
Moore George G. I.
Parent Michael J.
Qiu Zai-Ming
3M Innovative Properties Company
Chen Kin-Chan
Kokko Kent S.
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