Photodetector device having stacked structure with improved...

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S225000

Reexamination Certificate

active

06894267

ABSTRACT:
A photodiode is provided which can operate at a high rate and is suitable for optical communications. The photodiode with a pin-type configuration of an end surface incidence type includes a first photodiode unit having a first n-type blocking layer, a first light-absorbing layer constituted by an intrinsic semiconductor, and a first p-type blocking layer on a semiinsulating substrate; a second photodiode unit having layers of the same configuration formed thereon; a contact layer; a first electrode; and a second electrode, wherein the thickness of each light-absorbing layer is half that in a conventional monolayer photodiode. As a result, the maximum travel time of the carriers (electrons and holes) in each photodiode unit is reduced by half and the photodiode can operate at a rate higher than that of the conventional photodiode.

REFERENCES:
patent: 4654468 (1987-03-01), Nath et al.
patent: 4822992 (1989-04-01), Bar-Joseph et al.
patent: 5105240 (1992-04-01), Omura
patent: 5574289 (1996-11-01), Aoki et al.
patent: 6020620 (2000-02-01), Kusakabe
patent: 6184538 (2001-02-01), Bandara et al.
patent: 01-265225 (1989-10-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Photodetector device having stacked structure with improved... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photodetector device having stacked structure with improved..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photodetector device having stacked structure with improved... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3450614

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.