Semiconductor light emitting device in which near-edge...

Details Semiconductor light emitting device in which near-edge... Semiconductor light emitting device in which near-edge...

2005-02-22

2005-02-22

Thomas, Tom (Department: 2815)

Coherent light generators

Particular active media

Semiconductor

C372S046012, C257S094000

Reexamination Certificate

active

06859478

ABSTRACT:
In a process for producing a semiconductor light emitting device, first, a lamination including an active zone, cladding layers, and a current confinement layer is formed. Then, a near-edge portion of the lamination having a stripe width is removed so as to produce a first space, and a second near-edge portion located under the first space and a stripe portion of the lamination being located inside the first space and having the stripe width are concurrently removed so that a second space is produced, and cross sections of the active layer and the current confinement layer are exposed in the second space. Finally, the first and second spaces are filled with a regrowth layer so that a dopant to the regrowth layer is diffused into a near-edge region of the remaining portion of the active layer.

REFERENCES:
patent: 4943970 (1990-07-01), Bradley
patent: 5331657 (1994-07-01), Yoo et al.
patent: 5604764 (1997-02-01), Motoda et al.
patent: 5832019 (1998-11-01), Paoli et al.
patent: 6084901 (2000-07-01), Suzuki
patent: 2000-31596 (2000-01-01), None

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