Submicron dimension compound semiconductor fabrication using the

Details Submicron dimension compound semiconductor fabrication using the Submicron dimension compound semiconductor fabrication using the

1988-04-15

1990-04-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG17, 148DIG50, 148DIG65, 148DIG135, 148DIG169, 156610, 437 78, 437107, 437133, 437228, 437974, 437947, H01L 2120

Patent

active

049200690

ABSTRACT:
Submicron structure fabrication is accomplished by providing vapor chemical erosion of a compound crystal by suppressing the more volatile elements so that the less volatile element is provided with an anti-agglomeration and erosion rate limiting capability which can be followed by subsequent regrowth in the same environment. The erosion is sensitive to crystallographic orientation.

REFERENCES:
patent: 3915765 (1975-10-01), Cho et al.
patent: 3969164 (1976-07-01), Cho et al.
patent: 3992233 (1976-11-01), Farrow
patent: 4371968 (1983-02-01), Trussell, Jr. et al.
patent: 4589192 (1986-05-01), Dinan et al.
patent: 4637129 (1987-01-01), Derkits, Jr. et al.
patent: 4644381 (1987-02-01), Shieh

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