Method of producing a surface acoustic wave device

Details Method of producing a surface acoustic wave device Method of producing a surface acoustic wave device

2005-05-31

2005-05-31

Tugbang, A. Dexter (Department: 3729)

Metal working

Piezoelectric device making

C029S594000, C029S412000, C029S417000, C029S831000, C310S31300R

Reexamination Certificate

active

06898831

ABSTRACT:
A surface acoustic wave device includes interdigital transducer (IDT) electrode and reflectors disposed on a piezoelectric substrate. Each of the IDT electrode and the reflectors has a multi-layer film structure including at least one layer (high specific gravity metal component containing layer) including as a major component a metal with a specific gravity of at least about 15 and having a film-thickness of at least about 10 nm, and at least one layer (low specific gravity metal component containing layer) including as a major component a metal with a specific gravity of up to about 10 and a volume resistivity as a bulk value (at about 20° C.) of up to about 10×10−8Ω·m, and having a film-thickness of at least about 10 nm. For example, the multi-layer structure includes an Ni film (low specific gravity metal component containing layer) with a film-thickness of about 150 nm disposed on a Ti film, a Cu film (low specific gravity metal component containing layer) with a film-thickness of about 250 nm disposed on the Ni film, and an Au film (high specific gravity metal component containing layer) with a film-thickness of about 50 nm disposed on the Cu film.

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