Semiconductor light-emitting device having a semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

Reexamination Certificate

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C257S080000, C257S088000, C257S099000

Reexamination Certificate

active

06956242

ABSTRACT:
A semiconductor light-emitting element1is mounted on a substrate2with an anisotropically conductive adhesive3, which has electrically conductive particles32dispersion-mixed with a thermosetting resin31, laid between a pair of electrodes11and11′ formed on the same surface of the semiconductor light-emitting element and wiring electrodes21and21′ formed on the substrate2. Depressions22and22′ are formed in the portion of the surface of the wiring electrodes21and21′ facing the semiconductor light-emitting element1so that the electrically conductive particles32are stably present between the pair of electrodes11and11′ and the wiring electrodes21and21′.

REFERENCES:
patent: 2000-135814 (2000-05-01), None
3M Technical data, Z-Axis Adhesive film 5303R-2, found on the Web at: http://products3.3m.com/catalog/us/en001/government/gsa
ode_GS25XDFZW2be/root_GS3RBW6QFVgv/vroot_GSL4YG63GRge/gvel_087TG8C9KBgl/theme_us_gsa_3_0/command_AbcPageHandler/output_html.

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