Method for manufacturing semiconductor device

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

Reexamination Certificate

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C438S691000, C438S689000, C438S279000

Reexamination Certificate

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06927168

ABSTRACT:
A method of manufacturing a semiconductor device capable of polishing evenly and separating the adjacent word lines by performing the flattening process using slurry with a doping material added during the polishing process.

REFERENCES:
patent: 6177320 (2001-01-01), Cho et al.
patent: 6284660 (2001-09-01), Doan
patent: 6723655 (2004-04-01), Park et al.

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