Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2005-08-09
2005-08-09
Thai, Luan (Department: 2891)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S691000, C438S689000, C438S279000
Reexamination Certificate
active
06927168
ABSTRACT:
A method of manufacturing a semiconductor device capable of polishing evenly and separating the adjacent word lines by performing the flattening process using slurry with a doping material added during the polishing process.
REFERENCES:
patent: 6177320 (2001-01-01), Cho et al.
patent: 6284660 (2001-09-01), Doan
patent: 6723655 (2004-04-01), Park et al.
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
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