Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-10-04
2005-10-04
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S018000, C257S022000
Reexamination Certificate
active
06952018
ABSTRACT:
A semiconductor device includes a superlattice that, in turn, includes a plurality of stacked groups of layers. The device may also include regions for causing transport of charge carriers through the superlattice in a parallel direction relative to the stacked groups of layers. Each group of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon. Moreover, the energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. Accordingly, the superlattice may have a higher charge carrier mobility in the parallel direction than would otherwise be present.
REFERENCES:
patent: 4485128 (1984-11-01), Dalal et al.
patent: 4594603 (1986-06-01), Holonyak, Jr.
patent: 4882609 (1989-11-01), Schubert et al.
patent: 4908678 (1990-03-01), Yamazaki
patent: 4937204 (1990-06-01), Ishibashi et al.
patent: 4969031 (1990-11-01), Kobayashi et al.
patent: 5081513 (1992-01-01), Jackson et al.
patent: 5216262 (1993-06-01), Tsu
patent: 5357119 (1994-10-01), Wang et al.
patent: 5606177 (1997-02-01), Wallace et al.
patent: 5683934 (1997-11-01), Candelaria
patent: 5684817 (1997-11-01), Houdre et al.
patent: 5796119 (1998-08-01), Seabaugh
patent: 5994164 (1999-11-01), Fonash et al.
patent: 6058127 (2000-05-01), Joannopoulos et al.
patent: 6255150 (2001-07-01), Wilk et al.
patent: 6274007 (2001-08-01), Smirnov et al.
patent: 6281518 (2001-08-01), Sato
patent: 6281532 (2001-08-01), Doyle et al.
patent: 6326311 (2001-12-01), Ueda et al.
patent: 6344271 (2002-02-01), Yadav et al.
patent: 6350993 (2002-02-01), Chu et al.
patent: 6376337 (2002-04-01), Wang et al.
patent: 6436784 (2002-08-01), Allam
patent: 6472685 (2002-10-01), Takagi
patent: 6498359 (2002-12-01), Schmidt et al.
patent: 6501092 (2002-12-01), Nikonov et al.
patent: 6566679 (2003-05-01), Nikonov et al.
patent: 6621097 (2003-09-01), Nikonov et al.
patent: 2003/0034529 (2003-02-01), Fitzgerald et al.
patent: 2003/0057416 (2003-03-01), Currie et al.
patent: 2003/0162335 (2003-08-01), Yuki et al.
patent: 2003/0215990 (2003-11-01), Fitzgerald et al.
patent: 0 843 361 (1998-05-01), None
patent: 2347520 (2000-09-01), None
patent: 61145820 (1986-07-01), None
patent: 61220339 (1986-09-01), None
patent: 99/63580 (1999-12-01), None
patent: 02/103767 (2002-12-01), None
Xuan Luo et al.; “Chemical Design of Direct-Gap Light-Emitting Silicon”; published Jul. 25, 2002 by The American Physical Society; vol. 89, No. 7.
R. Tsu; University of North Carolina at Charlotte, “Phenomena in Silicon Nanostructure Devices”; published Sep. 6, 2000 © Springer-Verlag 2000.
P.D. Ye et al., “GaAs MOSFET with Oxide Gate Dielectric Grown by Atomic Layer Deposition”; © 2003 Agere Systems, Mar. 2003.
Novikov et al.; “Silicon-based Optoelectronics” © 1999-2003 by John Wiley & Sons, Inc.; pp/ 1-6.
Patent Abstacts of Japan, vol. 012, No. 080 (E-590), Mar. 12, 1988 & JP 62 219665 A (Fujitsu Ltd), Sep. 26, 1987 abstract.
Patent Abstracts of Japan, vol. 010, No.179 (E-414). Jun. 24, 1986 & JP 61 027681 A (Res Dev Corp of Japan), Feb. 7, 1986 abstract.
Dukovski Ilija
Hytha Marek
Kreps Scott A.
Mears Robert J.
Sow Fook Yiptong Jean Augustin Chan
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Nelms David
Nguyen Thinh T
RJ Mears, LLC
LandOfFree
Semiconductor device including band-engineered superlattice does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device including band-engineered superlattice, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device including band-engineered superlattice will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3445567