Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2005-03-15
2005-03-15
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C438S455000, C438S458000
Reexamination Certificate
active
06867067
ABSTRACT:
Methods for fabricating final substrates for use in optics, electronics, or optoelectronics are described. In an embodiment, the method includes forming a zone of weakness beneath a surface of a source substrate to define a transfer layer, and forming a first bonding layer on the source substrate surface. A second bonding layer may be formed on a surface of an intermediate support, and the exposed surfaces of the first and second bonding layers joined to form a composite substrate. Next, the source substrate is detached from the composite substrate along the zone of weakness to expose a surface of the transfer layer, and a support material is deposited onto the exposed surface of the transfer layer. The transfer layer and support material are then separated from the composite substrate by elimination of at least the first bonding layer to form the final substrate. The zone of weakness may advantageously be formed by implanting atomic species into the source substrate.
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Ghyselen Bruno
Letertre Fabrice
Lee Hsien-Ming
S.O.I. Tec Silicon on Insulator Technologies S.A.
Winston & Strawn LLP
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