Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Reexamination Certificate
2005-03-22
2005-03-22
Mai, Anh Duy (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Bidirectional rectifier with control electrode
C257S156000, C257S612000, C257S656000, C438S133000, C438S140000, C438S378000, C438S798000
Reexamination Certificate
active
06870199
ABSTRACT:
A semiconductor device that helps to prevent the occurrence of current localization in the vicinity of an electrode edge and improves the reverse-recovery withstanding capability. The semiconductor device according to the invention includes a first carrier lifetime region, in which the carrier lifetime is short, formed in such a configuration that the first carrier lifetime region extends across the edge area of an anode electrode projection, which projects the anode electrode vertically into a semiconductor substrate. The first carrier lifetime region also includes a vertical boundary area spreading nearly vertically between a heavily doped p-type anode layer and a lightly doped semiconductor layer. The first carrier lifetime region of the invention is formed by irradiating with a particle beam, such as a He2+ion beam or a proton beam.
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Fujii Takeshi
Nemoto Michio
Yoshikawa Ko
Duy Mai Anh
Fuji Electric & Co., Ltd.
Rossi & Associates
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