Semiconductor light emitting device with stacked light...

Details Semiconductor light emitting device with stacked light... Semiconductor light emitting device with stacked light...

2005-10-18

2005-10-18

Williams, Joseph (Department: 2879)

Electric lamp and discharge devices

With luminescent solid or liquid material

Solid-state type

C257S010000

Reexamination Certificate

active

06956322

ABSTRACT:
A light emitting device which can be easily manufactured and can control the positions of light emission precisely, and an optical device. A first and second light emitting elements are formed on one face of a supporting base. The first light emitting element has an active layer made of GaInN mixed crystal on a GaN-made first substrate on the side thereof on which the supporting base is disposed. The second light emitting element has lasing portions on a GaAs-made second substrate on the side thereof on which the supporting base is disposed. Since the first and second light emitting elements are not grown on the same substrate, a multiple-wavelength laser having the output wavelength of around 400 nm can be easily obtained. Since the first substrate is transparent in the visible region, the positions of light emitting regions in the first and second light emitting elements can be precisely controlled by lithography.

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