Method for forming dummy structures for improved CMP and...

Details Method for forming dummy structures for improved CMP and... Method for forming dummy structures for improved CMP and...

2005-02-01

2005-02-01

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S618000, C438S638000, C438S687000, C438S701000, C438S725000, C438S926000

Reexamination Certificate

active

06849549

ABSTRACT:
A method for forming a damascene structure to improve a chemical mechanical polishing (CMP) process while reducing the capacitance in an integrated circuit including forming a shallow dummy damascene adjacent active damascenes and removing the dummy damascene in a CMP process while forming the adjacent active damascenes.

REFERENCES:
patent: 6001733 (1999-12-01), Huang et al.
patent: 6214745 (2001-04-01), Yang et al.

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