Embedded electroconductive layer structure

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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C257S751000, C257S758000, C257S767000, C257S774000

Reexamination Certificate

active

06891269

ABSTRACT:
An embedded electroconductive layer is disclosed which comprises an opening part or a depressed part3formed in an insulating film2on a substrate1, a barrier layer for covering the opening part or the depressed part, a metal growth promoting layer5on the barrier layer, and an electroconductive layer6embedded in the opening part or the depressed part via the barrier layer4and the metal growth promoting layer5.

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