Magnetic memory device having a plurality of...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field

Reexamination Certificate

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C365S158000, C365S171000, C365S173000

Reexamination Certificate

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06956270

ABSTRACT:
A magnetic memory device comprises a plurality of magneto-resistance effect elements arranged in a matrix form. The each of a plurality of magneto-resistance effect elements have a pattern shape which substantially internally touches an ellipse having major and minor axes of the magneto-resistance effect element as major and minor axes thereof and a pitch between the adjacent magneto-resistance effect elements in a direction of the major axis is longer than that in a direction of the minor axis.

REFERENCES:
patent: 6005800 (1999-12-01), Koch et al.
patent: 6621731 (2003-09-01), Bessho et al.
patent: 6795335 (2004-09-01), Hidaka
patent: 2002/0080645 (2002-06-01), Liu et al.
patent: 2005/0063221 (2005-03-01), Motoyoshi
Roy Scheuerlein, et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell”, Digest of Technical Papers, IEEE International Solid-State Circuits Conference, Session 7 / TD: Emerging Memory & Device Technologies, Feb. 8, 2000, pp. 128-129.
Masashige Sato, et al., “Spin-Valve-Like Properties of Ferromagnetic Tunnel Junctions”, Jpn. J. Appl. Phys., vol. 36 Part 2, No. 2B, Feb. 15, 1997, pp. L200-L201.
U.S. Appl. No. 10/771,548, filed Feb. 5, 2004, Fukuzumi.
U.S. Appl. No. 10/895,074, filed Jul. 21, 2004, Fukuzumi et al.

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