Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1995-06-06
1997-02-11
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257152, 257153, 257264, 257266, 257287, H01L 2974, H01L 31111
Patent
active
056024053
ABSTRACT:
A semiconductor device, by which a base in which gates are buried can be formed by the junction of semiconductor substrates to each other at a lower temperature, and a fabrication process thereof are provided. Recesses are defined in the top of an N.sup.- substrate. A P.sup.+ layer is formed on the underside of the N.sup.- substrate. P.sup.+ -Gate regions are each formed in an area ranging from the bottom to lower side portions of the recesses. A metal layer composed of an Au-Sb alloy is formed on the underside of the N.sup.+ substrate. The N.sup.- substrate and the N.sup.+ substrate are subjected to a treatment for removing impurities thereon with an aqueous solution of sulfuric acid and hydrogen peroxide, washed with purified water and dried by a spin dryer. The N.sup.- substrate and the N.sup.+ substrate are heated at about 350.degree. C. in a hydrogen atmosphere in a state that the tops of projections between the recesses have been brought into contact with the metal layer provided on the underside of the N.sup.+ substrate, whereby the N.sup.- substrate and the N.sup.+ substrate are joined to each other.
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Kubovcik Ronald J.
Martine Peter B.
NGK Insulators Ltd.
Ngo Ngan V.
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