Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2005-03-15
2005-03-15
Kunemund, Robert (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S692000, C438S693000, C438S745000, C156S345120, C216S038000, C216S088000, C216S089000, C216S091000
Reexamination Certificate
active
06867138
ABSTRACT:
The surface of a semiconductor device is polished by first supplying a polishing pad with a slurry that contains a solvent, abrasive grains, and an additive for making the viscosity of the slurry variable so that the top portion of the polishing pad is soaked with the slurry, then supplying the polishing pad with a viscosity modifier for increasing the viscosity of the slurry and hardening the top portion of the polishing pad soaked with the slurry, and finally polishing the surface of the semiconductor device with the slurry having its viscosity increased and the polishing pad having its top portion hardened.
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Miyashita Naoto
Nishioka Takeshi
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
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