Side-wall barrier structure and method of fabrication

Details Side-wall barrier structure and method of fabrication Side-wall barrier structure and method of fabrication

2005-09-20

2005-09-20

Potter, Roy (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S774000, C438S629000, C438S630000

Reexamination Certificate

active

06946735

ABSTRACT:
The invention includes a wafer having a poly silicon plug passing through a CP-contact. The poly silicon plug is formed from a relatively heavily doped poly silicon layer and a relatively lightly doped poly silicon layer. The relatively lightly doped poly silicon layer passes through the relatively heavily doped poly silicon layer to extend beyond the relatively heavily doped poly silicon layer towards the surface of the wafer. A barrier layer covers top and side walls of the relatively lightly doped poly silicon layer for reducing oxidation at the surface of the poly silicon plug. The wafer is fabricated by depositing a relatively heavily doped poly silicon layer in a CP-contact, depositing a relatively lightly doped poly silicon layer to pass through the relatively heavily doped poly silicon layer, and depositing a barrier layer to cover top and side walls of the relatively lightly doped poly silicon layer to reduce oxidation at the surface of the poly silicon plug.

REFERENCES:
patent: 5459345 (1995-10-01), Okudaira et al.
patent: 6278150 (2001-08-01), Okudaira et al.
patent: 6696761 (2004-02-01), Chan et al.
patent: 6764863 (2004-07-01), Sheu et al.

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