Method for manufacturing optoelectronic material

Details Method for manufacturing optoelectronic material Method for manufacturing optoelectronic material

2005-09-13

2005-09-13

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S029000, C438S048000

Reexamination Certificate

active

06943048

ABSTRACT:
An optoelectronic material, device applications, and methods for manufacturing the optoelectronic material are provided to make it possible to obtain stable characteristics without deterioration of luminescence over time in the atmosphere. The optoelectronic material is composed of a porous silicon the surface of which is nitrided to form a silicon nitride layer thereon. This allows a stable electroluminescence to be obtained, without oxidation of the surface of the porous silicon.

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