Semiconductor storage device and its manufacturing method

Details Semiconductor storage device and its manufacturing method Semiconductor storage device and its manufacturing method

2005-09-06

2005-09-06

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S538000

Reexamination Certificate

active

06940152

ABSTRACT:
A plurality of impurity diffusion layers working as bit lines are formed in surface portions of a semiconductor substrate, and a plurality of buried insulating films are formed above the plural impurity diffusion layers on the semiconductor substrate. Gate electrodes of memory devices include a plurality of first polysilicon films, which are formed between the buried insulating films with a trapping film formed below and have top faces at substantially the same level as top faces of the buried insulating films, and a second polysilicon film formed over the plural buried insulating films and the plural first polysilicon films for electrically connecting the plural first polysilicon films to one another.

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