Nonvolatile semiconductor memory with X8/X16 operation mode...

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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C365S185330, C365S189030, C365S230030

Reexamination Certificate

active

06958935

ABSTRACT:
The present invention relates to a nonvolatile semiconductor memory, that is, a flash memory and especially to a NAND type flash memory device capable of selectively controlling data input/output units by an address control. In the NAND type flash memory device, a memory cell array is divided into a plurality of blocks, and a data input/output path is selectively controlled by a predetermined data rate option and introduced addresses to perform data input/output operations at a ×8 or ×16 speed in one chip.

REFERENCES:
patent: 5537351 (1996-07-01), Suwa et al.
patent: 5764590 (1998-06-01), Iwamoto et al.
patent: 5926420 (1999-07-01), Kim
patent: 6275412 (2001-08-01), Kasa et al.
patent: 6335901 (2002-01-01), Morita et al.
patent: 6724682 (2004-04-01), Lee et al.
patent: 1997-59710 (1997-11-01), None
patent: 2002/0091932 (2002-12-01), None
patent: 1020020091932 (2002-12-01), None
English language abstract of Korea Publication No. 1997-59710.
English language abstract of Korea Publication No. 1020020091932.

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