Method and apparatus for selective pre-dispersion of...

Details Method and apparatus for selective pre-dispersion of... Method and apparatus for selective pre-dispersion of...

2005-10-18

2005-10-18

Berman, Jack I. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S3960ML

Reexamination Certificate

active

06956225

ABSTRACT:
Ion implantation systems are provided, comprising a dispersion system located between an ion source and a mass analyzer, that operates to selectively pass an extracted ion beam from the ion source toward the mass analyzer or to direct a dispersed ion beam toward the mass analyzer, where the dispersed ion beam has fewer ions of an undesired mass range than the extracted ion beam.

REFERENCES:
patent: 5703375 (1997-12-01), Chen et al.
patent: 6130436 (2000-10-01), Renau et al.
patent: 6313475 (2001-11-01), Renau et al.
patent: 6403967 (2002-06-01), Chen et al.
patent: 6573517 (2003-06-01), Sugitani et al.
patent: 2003/0066976 (2003-04-01), Chen et al.
patent: 2003/0200930 (2003-10-01), Chen et al.

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