Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2005-10-25
2005-10-25
Zarabian, Amir (Department: 2822)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
C438S977000, C257S690000, C257S618000
Reexamination Certificate
active
06958285
ABSTRACT:
In some embodiments, a fabrication method comprises: forming a structure that has one or more substrates, wherein the one or more substrates are either a single substrate or a plurality of substrates bonded together, wherein the structure comprises a non-electronically-functioning component which includes at least a portion of the one or more substrates and/or is attached to the one or more substrates; wherein the one or more substrates include a first substrate which has: a first side, an opening in the first side, and a conductor in the opening; wherein the method comprises removing material from the structure so that the conductor becomes exposed on a second side of the first substrate. In some embodiments, the second side is a backside of the first substrate, and the exposed conductor provides backside contact pads. In some embodiments, the fabrication method comprises: forming a structure comprising a first substrate which has: a first side, an opening in the first side, and a conductor in the opening; removing material from the structure so that the conductor becomes exposed on a second side of the first substrate; wherein removing of the material comprises removing the material from a first portion of the second side of the first substrate to cause the first portion to be recessed relative to a second portion of the second side of the first substrate.
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MacPherson Kwok & Chen & Heid LLP
Rose Kiesha
Shenker Michael
Tru-Si Technologies Inc.
Zarabian Amir
LandOfFree
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