Semiconductor integrated circuit device including first,...

Details Semiconductor integrated circuit device including first,... Semiconductor integrated circuit device including first,...

2005-05-31

2005-05-31

Nguyen, Viet Q. (Department: 2818)

Static information storage and retrieval

Floating gate

C257S314000, C257S315000, C257S319000, C257S320000, C257S326000

Reexamination Certificate

active

06901006

ABSTRACT:
In a semiconductor integrated circuit device including a third gate, the present invention improves miniaturization and operation speed and reduces a defect density of an insulator film. In a semiconductor integrated circuit device including a well of a first conductivity type formed in a semiconductor substrate, a source/drain diffusion layer of a second conductivity type inside the well, a floating gate formed over the semiconductor substrate through an insulator film, a control gate formed and isolated from the floating gate through an insulator film, word lines formed by connecting the control gates and a third gate formed and isolated from the semiconductor substrate, the floating gate and the control gate through an insulator film and different from the floating gate and the control gate, the third gate is buried into a space of the floating gates existing in a direction vertical to the word line and a channel.

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