Non-volatile semiconductor memory device and electric device...

Details Non-volatile semiconductor memory device and electric device... Non-volatile semiconductor memory device and electric device...

2005-04-12

2005-04-12

Auduong, Gene N. (Department: 2818)

Static information storage and retrieval

Floating gate

Particular connection

C365S185330, C365S189050

Reexamination Certificate

active

06879520

ABSTRACT:
A non-volatile semiconductor memory device includes: a memory cell array in which electrically rewritable floating gate type memory cells are arranged; and a plurality of sense amplifier circuits configured to read data from the memory cell array, wherein each the sense amplifier circuit is configured to sense cell data of a first memory cell selected from the memory cell array under a read condition determined in correspondence with cell data of a second memory cell adjacent to the first memory cell and written after the first memory cell.

REFERENCES:
patent: 5642311 (1997-06-01), Cleveland et al.
patent: 5867429 (1999-02-01), Chen et al.
patent: 6438035 (2002-08-01), Yamamoto et al.
patent: 20030142568 (2003-07-01), Giove et al.
patent: 2001-267537 (2001-09-01), None
patent: 2001-274364 (2001-10-01), None
U.S. Appl. No. 09/800,913, filed Mar. 8, 2001, Hsono et al.

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