Semiconductor device

Details Semiconductor device Semiconductor device

2005-01-11

2005-01-11

Clark, Jasmine (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

Reexamination Certificate

active

06841879

ABSTRACT:
A field-effect transistor including N−-extension regions, an N+-drain region, an N+-source region and a gate electrode at a surface of a silicon substrate. A sidewall insulating film on one of the side surfaces of the gate electrode partially covers the surface of the N−-extension region, and a sidewall insulating film on the other side surface entirely covers the N−-extension region. Further, a silicon oxide film covers the surface of N−-extension region not covered by the sidewall insulating film. Thereby, resistances of the gate electrode, source region, and drain region can be easily reduced in a transistor having extension regions, which are asymmetrical with respect to the gate electrode.

REFERENCES:
patent: 5719083 (1998-02-01), Komatsu
patent: 6100562 (2000-08-01), Yamazaki et al.
patent: 6365471 (2002-04-01), Chen et al.
E. Morifuji et al.; “RF modeling for 0.1μm gate length MOSFETS”,Proc. 29thESSDERC, pp. 656-659, 1999.
Yutaka Hoshino et al.; “High performance Scaled down Si LDMOSFET with Thin Gate Bird's beak Technology for RF power Amplifiers”,IEDM Tech. Digest, pp. 205-208, 1999.

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