Magneto-resistive device, and magnetic head and head...

Details Magneto-resistive device, and magnetic head and head... Magneto-resistive device, and magnetic head and head...

2005-01-04

2005-01-04

Cao, Allen (Department: 2652)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

06839205

ABSTRACT:
A magneto-resistive device has a magneto-resistive layer laminated between electrodes. The magneto-resistive layer has a non-magnetic layer, a pinned layer and a free layer sandwiching the non-magnetic layer, and a pin layer formed on the pinned layer on the opposite side to the free layer. The pin layer is formed in a region which substantially overlaps with an effective region in a film plane direction in which a current flows in a direction substantially perpendicular to the film plane between the electrodes in a predetermined thickness, and is formed in a region which does not substantially overlap with the effective region substantially in the same thickness as the predetermined thickness or in a thickness smaller than the predetermined thickness, continuous from the region which substantially overlaps with the effective region.

REFERENCES:
patent: 5668688 (1997-09-01), Dykes et al.
patent: 5959810 (1999-09-01), Kakihara et al.
patent: 6128167 (2000-10-01), Saito et al.
patent: 6542342 (2003-04-01), Hayashi et al.
patent: 6718621 (2004-04-01), Hayashi et al.
patent: 20030035256 (2003-02-01), Hayashi et al.
Nagasaka et al., “Giant Magnetoresistance Properties of Spin Valve Films in Current-perpendicular-to-plane Geometry”, Journal of Magnetics Society of Japan, vol. 25, No. 4-2, pp. 807-810, 2001.

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