Magnetoresistive random access memory (MRAM) cell patterning

Details Magnetoresistive random access memory (MRAM) cell patterning Magnetoresistive random access memory (MRAM) cell patterning

2005-05-03

2005-05-03

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S629000, C438S758000, C438S670000, C438S951000

Reexamination Certificate

active

06887719

ABSTRACT:
A process that advantageously forms MRAM cells without the application of ion beam milling processes. Unlike conventional processes that rely on ion beam milling processes to remove materials from a magnetoresistive sandwich from areas other than areas that will later form MRAM cell bodies, this process forms a layer of photoresist over areas other than those areas that correspond to MRAM cell bodies. The photoresist is lifted off after the deposition of a magnetoresistive sandwich that forms the MRAM cell bodies, thereby safely removing the magnetoresistive sandwich from undesired areas while maintaining the magnetoresistive sandwich in the areas corresponding to MRAM cell bodies.

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