Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-09-27
2005-09-27
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S018000, C257S190000, C257SE21182, C257SE21207, C257SE29193, C257SE31049, C438S022000
Reexamination Certificate
active
06949761
ABSTRACT:
A structure and method of fabricating a high-mobility semiconductor layer structure and field-effect transistor (MODFET) that includes a high-mobility conducting channel, while at the same time, maintaining counter doping to control deleterious short-channel effects. The MODFET design includes a high-mobility conducting channel layer wherein the method allows the counter doping to be formed using a standard technique such as ion implantation, and further allows the high-mobility channel to be in close proximity to the counter doping without degradation of the mobility.
REFERENCES:
patent: 2003/0102490 (2003-06-01), Kubo et al.
Chu Jack O.
Koester Steven J.
Ouyang Qiqing C.
Flynn Nathan J.
International Business Machines - Corporation
Scully Scott Murphy & Presser
Trepp, Esq. Robert M.
Wilson Scott R.
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