Image sensing device using MOS type image sensing elements

Details Image sensing device using MOS type image sensing elements Image sensing device using MOS type image sensing elements

2005-09-20

2005-09-20

Porta, David (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C348S313000

Reexamination Certificate

active

06946637

ABSTRACT:
In a photoelectric conversion device having a plurality of pixel cells each of which includes a photoelectric conversion element, a field effect transistor having the gate area for storing signal charge generated by the photoelectric conversion element and the source-drain path for outputting a signal corresponding to the signal charge stored in the gate, a first power supply line for supplying electric power to the field effect transistor, and a first switch connected between the field effect transistor and the first power supply line, when a reset voltage for resetting the gate of the field effect transistor is Vsig0, a threshold voltage of the field effect transistor is Vth, current flowing through the field effect transistor is Ia, a voltage applied via the first power supply line is Vc1, and a series resistance of the first switch is Ron, each pixel cell is configured to satisfy a condition determined by Vc1−Ron×Ia>Vsig0−Vth.

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