Nitride-based semiconductor laser device

Details Nitride-based semiconductor laser device Nitride-based semiconductor laser device

2005-10-11

2005-10-11

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010

Reexamination Certificate

active

06954478

ABSTRACT:
A nitride-based semiconductor laser device capable of elongating the life thereof is obtained. This nitride-based semiconductor laser device comprises a first cladding layer consisting of a first conductivity type nitride-based semiconductor, an emission layer, formed on the first cladding layer, consisting of a nitride-based semiconductor and a second cladding layer, formed on the emission layer, consisting of a second conductivity type nitride-based semiconductor, while the emission layer includes an active layer emitting light, a light guiding layer for confining light and a carrier blocking layer, arranged between the active layer and the light guiding layer, having a larger band gap than the light guiding layer.

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patent: 6795471 (2004-09-01), Watanabe et al.
patent: 2000-196194 (2000-07-01), None
Shin-ichi Nagahara et al., “High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates”, Japanese Journal of Applied Physics, vol. 39, (2000), L647-650.

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