Separating apparatus and processing method for plate member

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

Reexamination Certificate

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C156S583200

Reexamination Certificate

active

06946052

ABSTRACT:
This invention is to guarantee that in separating a plate member such as a bonded substrate stack, a fluid is injected to an appropriate portion of the plate member. While a bonded substrate stack (50) is rotated, the vertical position of its peripheral portion is measured throughout its perimeter by a measuring device (150). Then, while the vertical position of a nozzle (120) is dynamically adjusted on the basis of the measurement result, and at the same time, the bonded substrate stack (50) is rotated, the bonded substrate stack (50) is separated into two substrates at a porous layer by injecting a fluid ejected from the nozzle (120).

REFERENCES:
patent: 2191513 (1940-02-01), Bigelow
patent: 2517394 (1950-08-01), Tellier
patent: 3094207 (1963-06-01), Millhiser et al.
patent: 3489608 (1970-01-01), Jacobs et al.
patent: 3493155 (1970-02-01), Litant et al.
patent: 3549446 (1970-12-01), Bennett et al.
patent: 3549466 (1970-12-01), Kay et al.
patent: 3667661 (1972-06-01), Farmer
patent: 3730410 (1973-05-01), Altshuler
patent: 3970471 (1976-07-01), Bankes et al.
patent: 4047973 (1977-09-01), Williams
patent: 4208760 (1980-06-01), Dexter et al.
patent: 4215928 (1980-08-01), Bayley et al.
patent: 4850381 (1989-07-01), Moe et al.
patent: 4962879 (1990-10-01), Goesele et al.
patent: 5100544 (1992-03-01), Izutani et al.
patent: 5248886 (1993-09-01), Asakawa et al.
patent: 5255853 (1993-10-01), Munoz
patent: 5357645 (1994-10-01), Onodera
patent: 5374564 (1994-12-01), Bruel
patent: 5379235 (1995-01-01), Fisher et al.
patent: 5482501 (1996-01-01), Frits
patent: 5492469 (1996-02-01), Oda et al.
patent: 5510019 (1996-04-01), Yabumoto et al.
patent: 5653247 (1997-08-01), Murakami
patent: 5679405 (1997-10-01), Thomas et al.
patent: 5724803 (1998-03-01), Pea
patent: 5741805 (1998-04-01), Acharya
patent: 5747387 (1998-05-01), Koizumi et al.
patent: 5783022 (1998-07-01), Cha et al.
patent: 5792709 (1998-08-01), Robinson et al.
patent: 5795401 (1998-08-01), Itoh et al.
patent: 5810028 (1998-09-01), Ichikawa et al.
patent: 5820329 (1998-10-01), Derbinski et al.
patent: 5849602 (1998-12-01), Okamura et al.
patent: 5876497 (1999-03-01), Atoji
patent: 5928389 (1999-07-01), Jevtic
patent: 5934856 (1999-08-01), Asakawa et al.
patent: 5954888 (1999-09-01), Gupta et al.
patent: 5994207 (1999-11-01), Henley et al.
patent: 6007675 (1999-12-01), Toshima
patent: 6122566 (2000-09-01), Nguyen et al.
patent: 6168499 (2001-01-01), Jang
patent: 6221740 (2001-04-01), Bryan et al.
patent: 6277234 (2001-08-01), Freund et al.
patent: 6321134 (2001-11-01), Henley et al.
patent: 6418999 (2002-07-01), Yanagita et al.
patent: 6436226 (2002-08-01), Omi et al.
patent: 6527031 (2003-03-01), Yanagita et al.
patent: 6629539 (2003-10-01), Yanagita et al.
patent: 6672358 (2004-01-01), Yanagita et al.
patent: 6869266 (2005-03-01), Coomer et al.
patent: 2003/0116275 (2003-06-01), Yanagita et al.
patent: 2004/0045679 (2004-03-01), Yanagita et al.
patent: 0709876 (1996-05-01), None
patent: 0840381 (1998-05-01), None
patent: 0843345 (1998-05-01), None
patent: 0867917 (1998-09-01), None
patent: 0926719 (1999-06-01), None
patent: 0999578 (2000-05-01), None
patent: 1026729 (2000-08-01), None
patent: 1045448 (2000-10-01), None
patent: 60-005530 (1985-01-01), None
patent: 04-293236 (1992-10-01), None
patent: 05-021338 (1993-01-01), None
patent: 07-302889 (1995-11-01), None
patent: 11-045840 (1999-02-01), None
patent: 1998-33377 (1998-07-01), None
patent: WO99/06110 (1999-02-01), None
patent: WO01/04933 (2001-01-01), None
patent: WO01/10644 (2001-02-01), None
“Single-Crystal Silicon on Non-Single Crystal Insulators”, G.W. Cullen, Journal of Crystal Growth, vol. 63, No. 3, pp. 429-590 (1983).
“Crystalline Quality of Silicon Layer Formed by FIPOS Technology”, Kazuo Imai et al., Journal of Crystal Growth, vol. 63, pp. 547-553 (1983).
“Silicon-on-Insulator by Wafer Bonding: A Review”, W.P. Maszara, Journal of Electrochemical Society, vol., 138, pp. 341-347 (1991).
“Light Scattering Topography Charachterization of Bonded SOI Wafer”, H. Baumgart, et al., Extended Abstracts, vol. 91-2, pp. 733-734 (1991).
“Thinning of Bonded Wafer: Etch-Stop Approaches”, Charles E. Hunt et al., Extended Abstracts, vol. 91-2, pp. 696-697 (1991).
“Expitaxial Layer Transfer by Bond and Etch Back of Porous Si”, Takao Yonehara et al., Applied Physics Letters, vol. 64, pp. 2108-2110 (1994).
“Electrolytic Shaping of Germanium and Silicon”, A. Uhlir et al., Bell System Technical Journal, vol. 35, pp. 333-347 (1956).
“Oxidized Porous Silicon and It's Application”, K. Nagano et al., The Transactions of the Institute of Electronics and Communication Engineers, The Institute of Electronics, Information and Communication Engineers, vol. 79, pp. 49-54, SSD 79-9549 (1979).
“A New Dielectric Isolation Method Using Porous Silicon”, K. Imai, Solid-State Electronics, vol. 224, pp. 159-164 (1981).
“Silicon on Insulator Material by Wafer Bonding”, Christine Harendt, Charles E. Hunt et al., Journal of Electronic Materials, vol. 20, pp. 267-277 (1991).
“Smart-Cut: A New Silicon On Insulator Material Technology Based on Hydrogen Implantation and Wafer Bonding”, Michael Bruel, et al., Jpn. J. Appl. Phys. vol. 36, No. 3B, Part 01, pp. 1636-1641, Mar. 1, 1997.

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