Methods of manufacturing a tunnel magnetoresistive element,...

Details Methods of manufacturing a tunnel magnetoresistive element,... Methods of manufacturing a tunnel magnetoresistive element,...

2005-05-24

2005-05-24

Kim, Paul D (Department: 3729)

Metal working

Method of mechanical manufacture

Electrical device making

C029S603070, C029S603110, C029S603130, C029S603150, C029S603160, C029S603180, C216S039000, C216S041000, C360S324000, C360S325000, C360S326000, C360S327000, C365S158000, C365S173000, C427S127000, C427S128000

Reexamination Certificate

active

06895658

ABSTRACT:
A TMR element includes: a free layer formed on a lower gap layer; a tunnel barrier layer formed on the free layer; and a pinned layer formed on the tunnel barrier layer. The pinned layer and the tunnel barrier layer have sidewalls formed through etching. The TMR element further comprises a deposition layer made of a material that is separated by etching and deposits on the sidewalls and undergoes oxidation.

REFERENCES:
patent: 5959810 (1999-09-01), Kakihara et al.
patent: 5985162 (1999-11-01), Han et al.
patent: 5986858 (1999-11-01), Sato et al.
patent: 6052261 (2000-04-01), Watanabe et al.
patent: 11175920 (1999-07-01), None
“Spin Tunneling Magnetoresistive Effect In Ferromagnet/A1/sub 2/O/sub 3/Ferromagnet Junctions”; Miyazaki, T.; Tezuka, N.; Magnetic Recording Conference 1995. ‘Magnetic Recording Heads’., Digest of the , Jul. 10-12, 1995; pp: E5-E5.

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