Method for precision-processing a fine structure

Details Method for precision-processing a fine structure Method for precision-processing a fine structure

2005-01-04

2005-01-04

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S717000, C216S049000

Reexamination Certificate

active

06838386

ABSTRACT:
A two-dimensional crystalline film of ferritin4holding iron-oxide cores1is formed on a silicon substrate6.The silicon substrate6is then etched by using at least the cores1as an etching mask. Since the cores1have a small diameter of 6 nm, a fine structure can be formed on the substrate, enabling manufacturing of a semiconductor light-emitting element and various semiconductor devices using a quantum effect.

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International Search Report—PCT/JP01/02140, ISA/JPO, Jun. 26, 2001.
International Preliminary Examination Report—PCT/JP01/02140, IPEA/JPO.

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