Process for low-temperature metal-organic chemical vapor...

Details Process for low-temperature metal-organic chemical vapor... Process for low-temperature metal-organic chemical vapor...

2005-04-26

2005-04-26

Chen, Bret (Department: 1762)

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

C427S255394, C438S680000, C438S685000

Reexamination Certificate

active

06884466

ABSTRACT:
Processes for producing tungsten nitride and tungsten nitride films are provided in which a tungsten carbonyl compound and a nitrogen-containing reactant gas are reacted at a temperature below about 600° C. Tungsten nitride precursors are also included which comprise a tungsten carbonyl compound capable of forming a tungsten nitride film in the presence of a nitrogen-containing reactant gas at a temperature of less than about 600° C. A process for forming a film by atomic layer deposition is also provided which includes introducing a substrate having a surface into a deposition chamber and heating the substrate to a temperature sufficient to allow adsorption of a tungsten source precursor or an intermediate thereof, and thereafter sequentially introducing by pulsing: a tungsten source precursor which is absorbed as a monolayer, a purging inert gas, a nitrogen-containing gas for reacting with the monolayer to form a first tungsten nitride layer on the substrate surface, and an inert purging gas, and repeating the sequence to form a film of desired thickness.

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