Semiconductor device having SiOxNy gate insulating film

Details Semiconductor device having SiOxNy gate insulating film Semiconductor device having SiOxNy gate insulating film

2005-03-15

2005-03-15

Tran, Minh Loan (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C257S347000, C257S349000, C257S411000, C257S751000

Reexamination Certificate

active

06867432

ABSTRACT:
In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface. Hydrogen is introduced into the active layer. A thin film comprising SiOxNyformed to cover the active layer and then a gate insulating film comprising a silicon oxide film formed on the thin film comprising SiOxNy. Also, a thin film comprising SiOxNyis formed under the active layer. The active layer includes a metal element at a concentration of 1×1015to 1×1019cm−3and hydrogen at a concentration of 2×1019to 5×1021cm−3.

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