Semiconductor laser device, method of fabricating the same...

Details Semiconductor laser device, method of fabricating the same... Semiconductor laser device, method of fabricating the same...

2005-03-08

2005-03-08

Wong, Don (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C438S022000

Reexamination Certificate

active

06865201

ABSTRACT:
In connection with a nitride semiconductor laser device optimal for example for optical pickup and an optical information reproduction apparatus having superior condensation characteristics, the semiconductor laser device includes a substrate of nitride semiconductor, a lower clad layer of nitride semiconductor stacked thereon, an active layer stacked thereon, an upper clad layer of nitride semiconductor stacked thereon, and a contact layer of AlaInbGa1−a−bN stacked thereon having a lattice constant larger than the substrate of nitride semiconductor, and the device is cleaved and thus divided to have a surface serving as a resonator mirror.

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Masaru Kuramoto et al. (1999) Jpn. J. Appl. Phys. vol. 38 “Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with backside n-Contact” pp. L184-L186 no month.

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