Semiconductor image position sensitive device

Details Semiconductor image position sensitive device Semiconductor image position sensitive device

2005-01-25

2005-01-25

Allen, Stephone B. (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C250S2140RC, C250S214100

Reexamination Certificate

active

06847025

ABSTRACT:
In order to reduce errors in sensing an image position derived from noise light such as background noise, a semiconductor image position sensing device is provided with a photoelectric layer generating a photoelectric current in a portion onto which light was input in response to intensity of the light input to the photoelectric layer, a resistance layer laminated on the photoelectric layer in which the photoelectric current generated in the photoelectric layer flows into a portion corresponding to that onto which the light was input, and signal current output terminals wherein the photoelectric current generated in the photoelectric layer is distributed in a ratio in response to a resistance value between the signal current output terminals and the resistance layer defined at a position where the photoelectric current flowed into the resistance layer and from which the photoelectric current is output as an electric current obtained by summing currents over the whole sensing sections altogether, comprising further a resistance subtracting a photoelectric current having a predetermined distribution of electric current density from photoelectric currents generated in respective portions of the photoelectric layer over the whole sensing sections, and the photoelectric current subtracted by means of the resistance being adapted to flow into the resistance layer.

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