Semiconductor device having a buried wiring lead structure

Details Semiconductor device having a buried wiring lead structure Semiconductor device having a buried wiring lead structure

2005-05-03

2005-05-03

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S528000

Reexamination Certificate

active

06888220

ABSTRACT:
A semiconductor device includes a semiconductor substrate, an insulative film formed above the semiconductor substrate, the film having a first groove and a second groove greater in width than the first groove, a wiring lead buried in the first groove of the insulative film to have a substantially flat surface, and a capacitor buried in the second groove of the insulative film to have a substantially flat surface, the capacitor having a multilayer structure including a first conductive film identical in material to the lead, a capacitor dielectric film, and a second conductive film.

REFERENCES:
patent: 5691219 (1997-11-01), Kawakubo et al.
patent: 5708559 (1998-01-01), Brabazon et al.
patent: 6025226 (2000-02-01), Gambino et al.
patent: 6037206 (2000-03-01), Huang et al.
patent: 20020022333 (2002-02-01), Morand et al.
patent: 2001-036010 (1991-02-01), None
patent: 2001-237375 (2001-08-01), None

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